DMN2300UFD-7【PDF 2/7 页】MOSFET N-CH 20V 1.73A 3UDFN

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A Product Line of

Diodes Incorporated

DMN2300UFD

Maximum Ratings @T A = 25°C unless otherwise specified

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

20

±8

Unit

V

V

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady

State

T A = 25°C (Note 4)

T A = 85°C (Note 4)

T A = 25°C (Note 5)

I D

I DM

1.73

1.34

1.21

6.0

A

A

Thermal Characteristics @T A = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

(Note 4)

(Note 5)

(Note 4)

(Note 5)

P D

R θ JA

T J , T STG

0.96

0.47

130

265

-55 to +150

W

W

°C/W

°C/W

°C

Notes:

4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout .

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

Thermal Characteristics

10

10

I D W =1ms

D (A

10

9

8

Single Pulse

R θ JA = 136 ° C/W

R θ JA (t) = R θ JA *r(t)

T J - T A = P*R θ JA

1

(A) @P

I

)@

P

W =

0μ

s

R DS(ON)

Limited

A)

I D (

=1

@P

=1

)@

=1

(A

@

I D (

I D (

ms

@

7

6

5

4

3

0.1

0.01

I D (

@

A)

DC

W

I D

0s

P W

A)

s

P W

A)

00

=1

P W

0m

s

2

T J(MAX) = 150 ° C

1

T A = 25 ° C

Single Pulse

I D (A) @

P W =10μs

0

0.0001 0.001

0.01 0.1 1 10 100 1000

0.001

0.1

1

10

100

t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

V DS , DRAIN-SOURCE VOLTAGE (V)

Fig. 2 SOA, Safe Operation Area

DMN2300UFD

Datasheet Number: DS35443 Rev. 2 - 2

2 of 7

www.diodes.com

September 2011

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